Home / Store / Journals / Electronic Articles / Fusion Science and Technology / Volume 52 / Number 4 / Pages 870-874
A. Yoshikawa, Y. Oya, H. Miyauchi, T. Nakahata, Y. Nishikawa, T. Suda, E. Igarashi, M. Oyaidzu, M. Tokitani, H. Iwakiri, N. Yoshida, K. Okuno
Fusion Science and Technology / Volume 52 / Number 4 / Pages 870-874
Format:electronic copy (download)
He+ implantation effects on the Retention behavior of hydrogen isotopes implanted into 35% oxygen-contained boron film was studied by means of SEM, AFM, XPS and TDS. It was found that the D retention for only D2+ implanted film was the highest and it decreased for pre-He+ implanted film and post-He+ implanted film. From the SEM and AFM images, the surface morphology of the oxygen-contained boron film was partly cracked, indicating that B2O3 was formed in the film. From the TDS and XPS results, the defective structure and the formation of B-D-B bond, B-D bond and B-O-D bond were observed by He+ and D2+ implantation, respectively. It was suggested that oxygen was trapped as B-O bond. The reaction with implanted D2+ was preceded in different mechanism.
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