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The division was organized to promote the advancement of knowledge of the use of particle accelerator technologies for nuclear and other applications. It focuses on production of neutrons and other particles, utilization of these particles for scientific or industrial purposes, such as the production or destruction of radionuclides significant to energy, medicine, defense or other endeavors, as well as imaging and diagnostics.
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2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
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Lightbridge announces first U-Zr fuel rod samples extruded at INL
Lightbridge Corporation announced today that it has reached “a critical milestone” in the development of its extruded solid fuel technology. Coupon samples using an alloy of zirconium and depleted uranium—not the high-assay low-enriched uranium (HALEU) that Lightbridge plans to use to manufacture its fuel for the commercial market—were extruded at Idaho National Laboratory’s Materials and Fuels Complex.
Stefan Costea et al.
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 712-715
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1023
Articles are hosted by Taylor and Francis Online.
Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon. a-Si:H typically contains about 10 atomic percent hydrogen.Tritium can readily substitute for hydrogen in a-Si:H without altering the physicochemical properties of the material. Tritium decay leads to a change in the local bond structure of the material as helium detaches from bonds leaving behind dangling bonds. The decay rate of tritium and therefore the rate of dangling bond formation is determined by the half-life of tritium. Hence, tritium provides a unique avenue to dynamically study the effect of dangling bonds on the density of states in the energy gap and therefore on the optoelectronic properties of a-Si:H. Tritiated hydrogenated amorphous silicon (a-Si:H:T) was deposited using mixtures of tritium and silane gases in a dc saddle-field glow-discharge deposition system. The amount of tritium in the films was controlled by adjusting the relative flow of tritium and silane gases into the deposition chamber.Photoluminescence, isothermal capacitive transient spectroscopy and constant photocurrent spectroscopy were used to measure defect concentration as a function of time in the films. The defect concentration was found to increase between 1 and 2 orders of magnitude, in about 300 hours. Thermal annealing decreased the defect concentration. It was found that tritium permits a study of the change in the density of defect states due to dangling bond formation in a-Si:H without the uncertainties introduced by the use of multiple samples.